Cloze (1): JXUwMDFjJXUwMDJiJXUwMDFmJXUwMDE5JXUwMDA3JXUwMDA5 is the introduction of impurities in semi-conductors to alter their electronic properties. The impurities are called dopants. Doping heavily may increase their conductivity by a factor greater than a million.

An Cloze (2): JXUwMDMxJXUwMDA3JXUwMDFhJXUwMDA2JXUwMDFiJXUwMDA3JXUwMDFkJXUwMDFhJXUwMDBh semi-conductor is one which is pure enough such that the impurities in it do not significantly affect its electrical behavior. Intrinsic semi-conductors increase their conductivity with increase in temperature.

 The Cloze (3): JXUwMDE2 type semiconductor is formed by doping an intrinsic semiconductor with Cloze (4): JXUwMDI4JXUwMDE1JXUwMDBiJXUwMDFhJXUwMDE1JXUwMDE3JXUwMDE3JXUwMDBkJXUwMDA5JXUw MDBiJXUwMDFh atoms like phosphorous.

A phosphorous atom has Cloze (5): JXUwMDNlJXUwMDBmJXUwMDFmJXUwMDEz Electrons four of which participate in forming covalent bonds with four neigbouring atoms of the pure semiconductor. The remaining electron is thus donated for electrical conductivity. The phosphorus atom is thus referred to as a Cloze (6): JXUwMDNjJXUwMDBiJXUwMDAxJXUwMDAxJXUwMDFk atom or N type .

 The Cloze (7): JXUwMDI4 type semiconductor is obtained by doping intrinsic semiconductors with Cloze (8): JXUwMDJjJXUwMDA2JXUwMDFiJXUwMDFmJXUwMDE3JXUwMDBkJXUwMDA5JXUwMDBiJXUwMDFh atoms eg Boron. Boron has Cloze (9): JXUwMDJjJXUwMDFjJXUwMDFhJXUwMDE3JXUwMDAw electrons available for bond formation whereas silicon has four. When Boron fits in the silicon crystal lattice, it will have one electron less to complete the bonding. The vacant place due to the missing electron is called a Cloze (10): JXUwMDMwJXUwMDA3JXUwMDAzJXUwMDA5 . The silicon crystal becomes an extrinsic semiconductor with Cloze (11): JXUwMDMwJXUwMDA3JXUwMDAzJXUwMDA5JXUwMDE2 as the majority charge carriers.